Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-03-28
1999-08-31
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C30B 2502
Patent
active
059448903
ABSTRACT:
In a method of producing single crystals on a seed crystal, the seed crystal is covered by a protection layer except for a surface on which the single crystals are to be formed. The protection layer is made of material such as carbon or the like, which is stable in a step of forming the single crystals. As a result, a temperature gradient and mass transfer in the seed crystal can be prevented, whereby quality of the single crystals formed on the seed crystal can be improved.
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Kamiya Nobuo
Kitou Yasuo
Okamoto Atsuto
Sugiyama Naohiro
Tani Toshihiko
Denso Corporation
Hiteshew Felisa
LandOfFree
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