Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-11-16
2010-06-15
Hug, Eric (Department: 1791)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S088000, C117S089000, C117S105000, C117S902000, C257SE21095, C257SE21096, C257SE21105, C257SE21107, C423S446000, C438S105000
Reexamination Certificate
active
07736435
ABSTRACT:
A method for producing a single crystals by preferential epitaxial growth of {100} face, comprising the steps of (1) growing the crystal on a single crystal {100} substrate; (2) forming on the side of the grown crystal a surface parallel to a {100} face different from the {100}face in the growth direction, and (3) growing the crystal on the formed {100} surface; and the steps (2) and (3) being performed once or more than once. A method for producing a single-crystal diamond using a metallic holder for the single-crystal diamond having a crystal holding portion which is raised above an outer peripheral portion of the holder, is part from the outer peripheral portion of the holder, and has a recessed shape. The methods enable the production of a large single-crystal diamond in a comparatively short time at low cost.
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Chayahara Akiyoshi
Fujimori Naoji
Horino Yuji
Mokuno Yoshiaki
Hug Eric
Malekzadeh Seyed Masoud
National Institute of Advanced Industrial Science and Technology
Westerman Hattori Daniels & Adrian LLP
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