Method of producing silicon monocrystal

Details Method of producing silicon monocrystal Method of producing silicon monocrystal

2007-03-27

2007-03-27

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S019000, C117S020000

Reexamination Certificate

active

10521035

ABSTRACT:
A silicon single crystal rod (24) is pulled from a silicon melt (13) made molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal rod and a temperature of the heater, thereby controlling a diameter of the silicon single crystal rod. A PID control in which a PID constant is changed on a plurality of stages is applied to a method which controls the pulling speed of the silicon single crystal rod so that the silicon single crystal rod has a target diameter and a method which controls a heater temperature so that the silicon single crystal rod has the target temperature. A set pulling speed for the silicon single crystal rod is set so that V/G becomes constant, and an actual pulling speed is accurately controlled so as to match with the set pulling speed, thereby suppressing a fluctuation in diameter of the single crystal rod.

REFERENCES:
patent: 5629216 (1997-05-01), Wijaranakula et al.
patent: 5746828 (1998-05-01), Boulaev
patent: 6776840 (2004-08-01), Fuerhoff et al.

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