Method of producing single crystal

Details Method of producing single crystal Method of producing single crystal

1994-03-23

1995-07-25

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117208, C30B 1514

Patent

active

054352630

ABSTRACT:
An apparatus for producing a single crystal comprising a heater which is arranged on the outer periphery of a crucible and movable along the axis of growth of a single crystal. The heater is moved along the direction of growth of the single crystal in accordance with the surface position of the molten liquid layer in the crucible. The apparatus for producing a single crystal further comprising means for adjusting the speed at which the seed crystal is pulled. For example, the pulling speed of the seed crystal is adjusted in accordance with the position of the heater.

REFERENCES:
patent: 2904512 (1959-09-01), Horn
patent: 4752451 (1988-06-01), Aubert et al.
patent: 4971652 (1990-11-01), Azad
patent: 5170061 (1992-12-01), Baba

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