Method of producing silison single crystal

Details Method of producing silison single crystal Method of producing silison single crystal

1994-03-21

1995-12-26

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, 117 20, C30B 1520

Patent

active

054778069

ABSTRACT:
A solid layer is melted from the upper part thereof by the heat of a heater while the contact area between a molten liquid layer and an inner wall of a crucible is adjusted in a Double Layered CZ method, so that the eluting amount of oxygen from the crucible to the molten liquid layer is controlled. Accordingly, silicon single crystals of the low concentration of oxygen are produced.

REFERENCES:
patent: 4243471 (1981-01-01), Ciszek et al.
patent: 4511428 (1985-04-01), Chosh et al.
patent: 4645560 (1987-02-01), Matsumoto et al.
German Office Action dated May 23, 1995 and English translation.

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