Method of producing single crystal and apparatus therefor

Details Method of producing single crystal and apparatus therefor Method of producing single crystal and apparatus therefor

1992-10-20

1994-10-25

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C30B 1520

Patent

active

053578988

ABSTRACT:
In growing an oxide single crystal such as a garnet single crystal or ferrite single crystal by the liquid epitaxial process, the Bridgman process or the like, the melting-out of a platinum or platinum-based alloy-made crucible holding a melt for growing the crystal therefrom is prevented by bringing an electrode in contact with the melt or dipping the electrode into the melt in oxygen, air or an inert gas, applying electric current through the melt between the electrode and the metallic container and controlling the current so as to keep it at nearly zero.

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Electronics and Optics, Thin Solid Films, 114, 1984, pp. 69-107, "Magnetic and Magneto-Optical Properties of Garnet Films", P. Hansen and J. P. Krume.
Journal Of The Applied Magnetics Society Of Japan, vol. 10, No. 2, 1986, p. 161, "Reduction of Optical Absorption in Bi Substituted Garnet Film by Annealing", M. Kaneko et al.
J. Magn. Soc. Jpn., vol. 11, SI (1987), p. 347, "Growth of Bi-Substituted Garnet Thick Epitaxial Films for Optical Isolators", K. Machida and Y. Asahara.
Journal Of The Applied Magnetics Society Of Japan, vol. 10, No. 2, 1986, pp. 147-150, "Growth and Characterization of NiGd Garnet Thick Films on 2-Inch-Diameter Nd.sub.3 Ga.sub.5 O.sub.12 Substrates", T. Ishikawa et al.

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