Method of production of single crystal

Details Method of production of single crystal Method of production of single crystal

1994-08-04

1995-12-19

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

117 1, 117 3, 117 49, C30B 1306

Patent

active

054760631

ABSTRACT:
A seed crystal is connected with a polycrystal at one end of the polycrystal, the connected crystal material is melted under a zero-gravity or microgravity environment without any container, and a single crystal is grown.

REFERENCES:
patent: 4615260 (1986-10-01), Dressler
Kolker, 5th European Symnposium on Material Sciences Under Microgravity, "Crystallization of a Silicon Sphere", pp. 169-172, Nov., 1984.

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