Method of producing silicon carbide single crystal

Details Method of producing silicon carbide single crystal Method of producing silicon carbide single crystal

1997-03-21

1999-10-12

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With movement of substrate or vapor or gas supply means...

117 2, 117902, 117935, 117951, 438931, C30B 2936

Patent

active

059649445

ABSTRACT:
An easy and low-cost method of producing a large-size and high-purity silicon carbide (SiC) single crystal includes reacting silicon vapor directly with a carbon-containing compound gas under a heated atmosphere (growth space 14) to grow a silicon carbide single crystal (15) on a silicon carbide seed crystal (12), in which the silicon vapor generated from molten silicon (13) is used as a silicon vapor source, and a hydrocarbon gas (9) (e.g., propane gas) is used as the carbon-containing compound gas.

REFERENCES:
patent: 3074887 (1963-01-01), Carroll
patent: 3275415 (1966-09-01), Chang
patent: 3520740 (1970-07-01), Addamiano
patent: 3755541 (1973-08-01), Strepkoff
patent: 4512825 (1985-04-01), Addamiano
patent: 4855254 (1989-08-01), Eshita
patent: 4866005 (1989-09-01), Davis
Kobayashi et al. "Evaluation of structural quality of a silicon carbide (6H-SiC) ingle crystal grown by a vapor transport method by Rutherford backscattering spectroscopy", Journal of Applied Physics, vol. 65, No. 4, pp. 1790-1792, Feb. 15, 1989.

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