Method of producing silicon single crystal

Details Method of producing silicon single crystal Method of producing silicon single crystal

1990-09-26

1995-02-28

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 31, 117931, 117944, C30B 1530

Patent

active

053927290

ABSTRACT:
A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.

REFERENCES:
patent: 4235848 (1980-11-01), Sokolov et al.
patent: 4350557 (1982-09-01), Scholl et al.
patent: 4609425 (1986-09-01), Mateika et al.
patent: 4894206 (1990-01-01), Yamashita et al.
Keigo Hoshikawa et al., "Low Oxygen Content Czochralski Silicon Crystal Growth", Japanese Journal of Applied Physics, vol. 19, No. 1, Jan. 1980, pp. L33-36.
T. Suzuko et al., "CZ Silicon Crystals Grown in a Transverse Magnetic Field", Sony Corp. Semiconductor Div. Japan 243, pp. 90-100.
"The Dissolution Rate Of Silica In Molten Silicon" by Hiroshi Hirata et al., Japan Journal of Applied Physics, vol. 19, No. 8, (1980).

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