4. Single-crystal, oriented-crystal, and epitaxy growth processes;
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Method for producing uniaxial tetragonal thin films of ternary i

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Patent

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Method for production of diamond particles

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes joining independent crystals
Patent

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Method for production of dislocation-free silicon single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method for production of multi-layered epitaxially grown...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Reexamination Certificate

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Method for production of silicon single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

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Method for production of spinel single crystal filaments

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
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Method for protecting the susceptor during epitaxial growth by C

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method for providing a silicon and diamond substrate having a ca

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method for providing a silicon and diamond substrate having a ca

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method for pulling a monocrystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent

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Method for pulling a silicon single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method for pulling a single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method for pulling a single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method for pulling a single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method for pulling a single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

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Method for pulling a single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method for pulling a single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent

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Method for pulling a single-crystal semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method for pulling crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
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Method for pulling single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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