Method for pulling a single crystal

Details Method for pulling a single crystal Method for pulling a single crystal

1998-03-31

2000-05-02

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117 20, 117201, 117202, C30B 1526

Patent

active

060568194

ABSTRACT:
In the pulling of a single crystal, hitherto, it is difficult to reduce the OSF density while the deformation rate is held down within the tolerance, so that it is difficult to improve the quality and productivity. In the present invention, a deviation from a true circle in each part of a single crystal S.sub.n-1 which was pulled in the preceding batch is found and the pulling speed pattern f.sub.pn-1 (L.sub.1) in the preceding batch is updated (f.sub.pn (L.sub.1)) before a single crystal S.sub.n is pulled, in order to pull the single crystal as fast as possible so that the OSF density is small while the deviation is within the tolerance.

REFERENCES:
patent: 5240684 (1993-08-01), Baba et al.
patent: 5437242 (1995-08-01), Hofstetter et al.
patent: 5584930 (1996-12-01), Katsuoka et al.
patent: 5660629 (1997-08-01), Shiraishi et al.
patent: 5665159 (1997-09-01), Fueroff

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