Method for production of dislocation-free silicon single crystal

Details Method for production of dislocation-free silicon single crystal Method for production of dislocation-free silicon single crystal

1998-06-08

2000-06-27

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 19, 117 30, 117 32, C30B 1520

Patent

active

060802375

ABSTRACT:
This invention is directed to a method for the production of a dislocation-free silicon single crystal by the Czochralski method. This method attains growth of the main body part of the dislocation-free silicon single crystal by immersing a seed crystal in a melt of silicon and then pulling the seed crystal without recourse to the necking. The seed crystal thus used is a dislocation-free silicon single crystal. The horizontal maximum length of the part of the seed crystal being immersed in the melt at the time of completing the immersion of the seed crystal in the melt is not less than 5 mm. The immersing rate of the seed crystal in the melt is not more than 2.8 mm/min and the part of the seed crystal to be immersed in the melt is a crystal as grown.

REFERENCES:
patent: 5126113 (1992-06-01), Yamagishi et al.
patent: 5628823 (1997-05-01), Chandrasekhar et al.
patent: 5885344 (1999-03-01), Kim et al.
patent: 5911822 (1999-06-01), Abe et al.
patent: 5916364 (1999-06-01), Izumi
ABE, "Innovated Silicon Crystal Growth and Wafering Technologies", Electrochemical Society Proceedings vol. 97-3, pp. 123-133.

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