Method for pulling a single-crystal semiconductor

Details Method for pulling a single-crystal semiconductor Method for pulling a single-crystal semiconductor

1996-12-10

1999-06-15

Garrett-Hiteshew, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 31, 117 32, 117917, C30B 1520

Patent

active

059118237

ABSTRACT:
A method for pulling a <110> single-crystal silicon aims at preventing the crystal from being cut in diameter-reducing and suppress the increase in cost due to the cut prevention to the minimum. In the step for forming a diameter-reduced portion performed prior to the step for growing a <110> single-crystal silicon by the Czochralski method, a magnetic field having a strength of 500 gauss or more is applied and while suppressing a melt surface vibration and temperature variation, the crystal diameter is reduced to 2.00 mm or smaller.

REFERENCES:
patent: 5178720 (1993-01-01), Frederick
patent: 5196085 (1993-03-01), Szekely et al.
patent: 5349921 (1994-09-01), Barraclough et al.

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