Method for pulling crystal

Details Method for pulling crystal Method for pulling crystal

1998-06-19

1999-06-15

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117 14, 117 15, 117217, 117 34, C30B 2300

Patent

active

059118261

ABSTRACT:
An electrode is disposed at the lower end of a radiation screen. The electrode is made of single-crystal silicon. A circuit including a power source is established by contacting the electrode and the seed crystal to a silicon melt.

REFERENCES:
patent: 5707441 (1998-01-01), Namikawa et al.
patent: 5785753 (1998-07-01), Taguchi et al.
patent: 5817176 (1998-10-01), Sung et al.

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