Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1998-02-06
2000-02-01
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 14, 117 15, C30B 1520
Patent
active
060198362
ABSTRACT:
In a conventional method for pulling a single crystal, a neck having a smaller diameter has been formed in order to exclude dislocation induced in dipping a seed crystal into a melt. However, in pulling a heavy single crystal having a large diameter of 12 inches or more, the single crystal cannot be supported and falls. When the diameter of the neck is large enough to prevent the fall, the dislocation cannot be excluded and propagates to the single crystal. According to the present invention, in a method for pulling a single crystal wherein a seed crystal is brought into contact with a melt within a crucible and then, a neck and a main body are formed, by setting the rotational speed of the seed crystal in the neck formation lower than the rotational speed thereof in the main body formation, dislocation can be efficiently excluded outward even if the neck is not too much narrowed down.
REFERENCES:
patent: 5126113 (1992-06-01), Yamagishi et al.
patent: 5578284 (1996-11-01), Chandrasekhar et al.
patent: 5628823 (1997-05-01), Chandrasekhar et al.
patent: 5779790 (1998-07-01), Marai et al.
patent: 5800612 (1998-09-01), Shimomura et al.
Hiteshew Felisa
Sumitomo Metal Industries Ltd.
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