Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-02-03
1996-06-18
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117929, 423446, C30B 2904
Patent
active
055267688
ABSTRACT:
A method for bonding CVD diamond to silicon. The first step of the method involves subsequently depositing a transition lawyer 48 on a diamond layer 46 of a composite wafer 40. Once the transition layer 48 has been deposited, wafer layer 50 comprised of silicon, is bonded or deposited to the transition layer 48. In this method, the transition layer 48 comprises carbon and silicon, with the portion of the transition layer 48 adjacent the diamond layer 46 being comprised of substantially carbon and the portion of the transition layer 48 adjacent the wafer layer 50 being comprised of substantially silicon. With the method, sharp interfaces and poor thermal matches between the layers in the composite wafer can be minimized. As a result, the layers in the composite wafer are less likely to delaminate and the composite wafer is likely to warp or bow due to mismatched film stresses. Another advantage is that the method can be carried out as one continuous process avoiding the added manufacturing costs often associated with prior methods which require these composite wafers to be constructed by two or more separate processing steps. Additionally, the diamond layer 46 can be protected from ambient temperature during high temperature processes involving other layers by the transition layer 48.
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Jones, et al., Abstract No. 478, J. Electrom. Soc., vol. 138, No. 8, Aug. 1991.
Harris Corporation
Kunemund Robert
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