Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-11-06
1998-06-02
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117217, 117222, 117900, C30B 1520
Patent
active
057592616
ABSTRACT:
A method and an apparatus for pulling a silicon monocrystal from a melt iudes the pulling of a conical portion in each case at the beginning and at the end of the monocrystal and the pulling of a cylindrical portion between the conical portions. In this method, the surface of the conical portion at the beginning of the monocrystal is shielded by a shielding means spaced apart from the monocrystal.
REFERENCES:
patent: 4078897 (1978-03-01), Jericho et al.
patent: 5361721 (1994-11-01), Takano et al.
patent: 5578123 (1996-11-01), Vilzmann et al.
Ammon Wilfried Von
Dornberger Erich
Garrett Felisa
Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
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