Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes joining independent crystals
Patent
1994-01-18
1995-10-03
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes joining independent crystals
117 43, 423446, C30B 2904
Patent
active
054543436
ABSTRACT:
A invention provides a method for production of diamond particles. The solvent metallic disk of a starting material specimen used in this diamond synthesis is divided into two layers. An intermediate layer is interposed between the two solvent metallic layers, so that the diamond crystals, formed on the two solvent metallic surfaces in contact with graphite disks and influenced by gravity, are not floated on the upper surface of the solvent metallic disk but grown at their positions in the individual solvent metallic layers at which they were nucleated. Hence, the method of this invention results in formation of the same number of diamond products, having the same size and desired good quality, on opposed surfaces or the upper and lower surfaces of the solvent metallic disk. The intermediate layer is a thin disk made of tungsten or molybdenum and having a thickness ranged from 10 .mu.m to 100 .mu.m.
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Eun Kwang Y.
Lee Jae K.
Park Jong K.
Breneman R. Bruce
Garrett Felisa
Korea Institute of Science and Technology
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