Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1998-02-06
1999-11-30
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C30B 1520
Patent
active
059935391
ABSTRACT:
In a conventional method for pulling a single crystal, a neck having a smaller diameter has been formed in order to exclude dislocation induced in dipping a seed crystal into a melt. However, in pulling a heavy single crystal having a large diameter of 12 inches or more, the single crystal cannot be supported and falls. When the diameter of the neck is large enough to prevent the fall, the dislocation cannot be excluded and propagates to the single crystal. In the present invention, when the distance between the lowest end of the seed crystal and the melt is 10-100 mm, the seed crystal is caused to stop descending and is preheated. Then, by bringing the seed crystal into contact with the melt at a gradually decreased descent speed, dislocation is not induced to the single crystal and the single crystal is formed without a neck.
REFERENCES:
patent: 5126113 (1992-06-01), Yamagishi et al.
patent: 5173270 (1992-12-01), Kida et al.
patent: 5183528 (1993-02-01), Baba et al.
patent: 5196086 (1993-03-01), Kida et al.
patent: 5578284 (1996-11-01), Chandrasekhar et al.
Hiteshew Felisa
Sumitomo Metal Industries Ltd.
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