Method for pulling a silicon single crystal

Details Method for pulling a silicon single crystal Method for pulling a silicon single crystal

1994-12-05

1996-01-30

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 17, 117213, C30B 1510

Patent

active

054873541

ABSTRACT:
A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximately proportional to the axial temperature gradient in the growing single crystal.

REFERENCES:
patent: 4330362 (1982-05-01), Zulehner
patent: 4783235 (1988-11-01), Morioka et al.
patent: 4981549 (1991-01-01), Yamashita et al.
patent: 5078830 (1992-01-01), Shirata et al.
M. Hourai et al., Proceedings of Progress in Semiconductor Fabrication, Tnical Conference at Semicon Europe 1993.
M. Hasebe et al., Defect Control in Semiconductors, Belgium Elsevier Science Publishers B.V., p. 157 (1990) "Ring-Likely Distributed Stacking Faults in Cz-Si Wafers".

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