LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Film evaluating method, temperature measuring method, and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Formation method for semiconductor layer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Formation of highly oriented diamond film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Formation of single-crystal thin SiC films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Forming improved metal nitrides

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Forming metal nitrides

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Fractal structure and its forming method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Fractal structure and method of forming it

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Free-standing (Al, Ga, In)N and parting method for forming same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Fully integrated process for MIM capacitors using atomic...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

GaAsP epitaxial wafer and a method for manufacturing it

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Gallium arsenide semiconductor devices fabricated with...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

GaN bulk growth by Ga vapor transport

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

GaN selective growth on SiC substrates by ammonia-source MBE

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

GaN single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

GaN system compound semiconductor and method for growing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Gas diffusion electrodes, membrane-electrode assemblies and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Gas diffusion electrodes, membrane-electrode assemblies and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

Generic process for preparing a crystalline oxide upon a group I