Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-10-25
2005-10-25
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S094000, C117S095000, C117S101000, C117S913000, C117S915000, C117S952000, C117S954000
Reexamination Certificate
active
06958093
ABSTRACT:
A method of forming a free-standing (Al, Ga, In)N article, by the steps including: providing an expitaxially compatible sacrificial template; depositing single crystal (Al, Ga, In)N material on the template to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material; and interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article. The free-standing (Al, Ga, In)N article produced by such method is of superior morphological character, and suitable for use as a substrate, e.g., for fabrication of microelectronic and/or optoelectronic devices and device precursor structures.
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Brandes George R.
Kelly Michael K.
Tischler Michael A.
Vaudo Robert P.
Cree Inc.
Fuierer Marianne
Hall David C.
Hultquist Steven J.
Kunemund Robert
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