Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2006-02-07
2006-02-07
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S085000, C117S086000, C117S101000, C117S105000
Reexamination Certificate
active
06994750
ABSTRACT:
Reference infrared-absorption spectrum patterns are prepared in advance as a database. The infrared-absorption spectrum pattern of a film targeted for measurement is measured using FT-IR spectroscopy. Subsequently, multivariate analysis is performed using PLS regression, based on the reference infrared-absorption spectrum patterns and the infrared-absorption spectrum pattern of the target film. The film-growing temperature and other factors are then computed in accordance with the analysis results.
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Kunemund Robert
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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