Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-07-21
1996-01-02
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117929, 427517, 423446, C30B 2308
Patent
active
054798752
ABSTRACT:
A method of forming a highly oriented diamond film having a reduced thickness with a high quality at a low cost. Surface of a single crystal substrate is cleaned, and is then left in a high vacuum of 10.sup.-6 Torr or less at a temperature between room temperature and 800.degree. C. for 15 min for releasing gas molecules absorbed on the surface of the substrate. The surface of the substrate is then processed using carbon-containing plasma for forming a barrier of obstructing a carbon component within the substrate. After that, an electric field is applied across the substrate and plasma for allowing a current to flow thereacross for a specified time, to form nuclei of diamond for synthesis of a diamond film. Thus, highly oriented diamond particles or films, in which crystal orientations thereof are epitaxial to the substrate, are synthesized.
REFERENCES:
patent: 4830702 (1989-05-01), Singh et al.
patent: 5180571 (1993-01-01), Hosaya et al.
patent: 5298286 (1994-03-01), Yang et al.
patent: 5314570 (1994-05-01), Ikegaya et al.
Hayashi Kazushi
Nakamura Rie
Nishimura Kozo
Saito Kimitsugu
Tachibana Takeshi
Kabushiki Kaisha Kobe Seiko Sho
Kunemund Robert
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