Formation of single-crystal thin SiC films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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117 90, 427249, 427255, C30B 2302

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active

061172332

ABSTRACT:
Thin, single-crystal SiC films are obtained by means of a pyrolysis process, the substrate to be coated being covered with a carbonaceous polysilane, the adhering layer being pyrolyzed in an inert atmosphere and the amorphous layer of SiC obtained in this way being crystallized by maintaining it at a temperature of over 700.degree. C. Using a special variation of the process, it is easy to form doped SiC films. To this end the dopant is added in the form of a silane compound.

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patent: 5225032 (1993-07-01), Golecki
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patent: 5393815 (1995-02-01), Takeda
patent: 5395648 (1995-03-01), Davis
Carlsson; Cooney (Journal of the American Ceramic Society, "Pyrolysis of Silicon-backbone polymers to SiC". 1990, vol. 73 No. 2 pp. 237-241, Feb. 1990.
Lewis "Direct Observation of Preceramic and Organic binder decomposition in 2-D Model". Journal of American Ceramic Society vol. 77 No. 7 pp. 1839-1845 Jul. 1994.
Kienzleszabo, Riedel Journal of Material Science 28 pp. 3931-3938 1993.

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