Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1997-08-06
2000-09-12
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117 90, 427249, 427255, C30B 2302
Patent
active
061172332
ABSTRACT:
Thin, single-crystal SiC films are obtained by means of a pyrolysis process, the substrate to be coated being covered with a carbonaceous polysilane, the adhering layer being pyrolyzed in an inert atmosphere and the amorphous layer of SiC obtained in this way being crystallized by maintaining it at a temperature of over 700.degree. C. Using a special variation of the process, it is easy to form doped SiC films. To this end the dopant is added in the form of a silane compound.
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Carlsson; Cooney (Journal of the American Ceramic Society, "Pyrolysis of Silicon-backbone polymers to SiC". 1990, vol. 73 No. 2 pp. 237-241, Feb. 1990.
Lewis "Direct Observation of Preceramic and Organic binder decomposition in 2-D Model". Journal of American Ceramic Society vol. 77 No. 7 pp. 1839-1845 Jul. 1994.
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Aldinger Fritz
Bill Joachim
Heimann Detlef
Lange Frederick F.
Wagner Thomas
Garrett Felisa
Max-Planck-Gesellschaft zur Forderung DE
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