LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Solid phase epitaxy reactor, the most cost effective GaAs epitax

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Solid solution wide bandgap semiconductor materials

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Solid solution wide bandgap semiconductor materials

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Solidification of crystalline silicon from reusable crucible...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Spinel-structured metal oxide on a substrate and method of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Strain compensated semiconductor structures and methods of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Sublimation and purification method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Sublimation growth of single crystal SiC

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Substituted donor atoms in silicon crystal for quantum computer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Substrate having a zinc oxide nanowire array normal to its...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Substrate including wide low-defect region for use in...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Substrate processing method and apparatus and SOI substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Substrate with a compound semiconductor surface layer and method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Substrate, semiconductor device, element-mounted device and prep

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Substrates and methods for gas phase deposition of semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Superconductor incorporating therein superconductivity...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Surface acoustic wave device, substrate therefor, and method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Surface preparation method and semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Surface treatment of an oxide LNBA2CU307-X single crystal