Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-09-06
1998-03-17
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 84, 117 90, 117921, C30B 2502
Patent
active
057282145
ABSTRACT:
When a cuprate oxide LnBa.sub.2 Cu.sub.3 O.sub.7-x (Ln=Y, Pr or Sm; 0.30.ltoreq.x.ltoreq.1) single crystal is heated for growing a film epitaxially on the crystal or for smoothing a damaged surface of the single crystal, many large protrusions occur on the surface of the oxide single crystal substrate or the film. The smooth surface of the oxides becomes rugged by the protrusions. According to the present invention, however, the oxide substrate or the oxide superconductor film can be heated in an atmosphere including oxygen of a partial pressure between 50 mTorr and 200 mTorr to prevent the protrusions from originating on the surface of the heated oxides.
REFERENCES:
patent: 5274249 (1993-12-01), Xi et al.
Terada, et al., "Surface study of . . . by an atomic oxygen beam", 320 Applied Physics Letters, 64(1994) 9 May, No. 19, pp. 2581-2583, Woodbury, NY, US.
"Growth of Ultrathin Y-Ba-Cu-O films by An Off-Axis RF Sputtering Technique", Yang, H.C., et al; Physica C (1 Dec. 1991), vol. 185-189, pt. 3, pp. 1981-1982 (Abstract only).
Enomoto Youichi
Fuke Hiroyuki
Konishi Masaya
Shiohara Yuh
Tanaka Shoji
Garrett Felisa
International Superconductivity Technology Center
Kabushiki Kaisha Toshiba
Sumitomo Electric Industries Ltd.
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