Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-03-31
2009-06-02
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S097000, C427S133000, C427S154000, C427S372200, C427S421100, C427S428100, C428S213000
Reexamination Certificate
active
07540919
ABSTRACT:
A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional as a mold cavity for receiving molten silicon; removing or reducing a prior applied release coating from the interior surface until a uniformly smooth finish is achieved; coating the interior surface with a first layer of release coating comprising silicon nitride; coating the interior surface with a second layer of release coat comprising silica suspended in water; coating the interior surface with a third layer of release coat comprising silicon nitride; curing the release coat on said crucible; casting a silicon ingot in the crucible; and then repeating the prior steps multiple times.
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Chartier Carl
Gupta Kedar P
Parthasarathy Santhana Raghavan
Talbott Jonathan A
Wan Yuepeng
GT Solar Incorporated
Hiteshew Felisa C
Vern Maine & Associates
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