Solid phase epitaxial crystallization of amorphous silicon films

Details Solid phase epitaxial crystallization of amorphous silicon films Solid phase epitaxial crystallization of amorphous silicon films

1995-12-26

1999-04-13

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 84, 117 95, C30B 2510

Patent

active

058939490

ABSTRACT:
A new process to form a polycrystalline silicon film using a polycrystalline silicon-germanium (poly-Si.sub.1-x Ge.sub.x) capping film to "seed" crystallization of an amorphous silicon film on an upper surface of a substrate. The polycrystalline silicon film has no nucleation sites and a greater number of grain boundaries in the region near the polycrystalline silicon upper surface than in the region near the polycrystalline silicon and substrate upper surface interface. This indicates that crystallization and crystal growth occurred from the polycrystalline silicon upper surface and proceeded in a direction towards the substrate upper surface.

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