Solid solution wide bandgap semiconductor materials

Details Solid solution wide bandgap semiconductor materials Solid solution wide bandgap semiconductor materials

2008-05-13

2008-05-13

Hiteshew, Felisa (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S068000, C117S084000, C117S089000

Reexamination Certificate

active

11484691

ABSTRACT:
A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x)without any buffer layer is disclosed. The (AIN)x(SiC)(1-x)alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x)alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

REFERENCES:
patent: 3979271 (1976-09-01), Noreika et al.
patent: 5700551 (1997-12-01), Kukino et al.
patent: 08-078202 (1996-03-01), None
patent: 10053495 (1998-02-01), None
patent: 20029053398 (2002-02-01), None

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