Solid phase epitaxy reactor, the most cost effective GaAs epitax

Details Solid phase epitaxy reactor, the most cost effective GaAs epitax Solid phase epitaxy reactor, the most cost effective GaAs epitax

1995-12-26

1998-03-10

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117109, 117200, C30B 2502

Patent

active

057256594

ABSTRACT:
Apparatus for performing SPE deposition for growing layers of semiconductive material includes a reaction chamber and means for mounting a substrate wafer and a source wafer in the reaction chamber. The substrate wafer and the source wafer are maintained at a predetermined distance which is less than the mean free path of the reactive species of the oxido-reduction of the semiconductive material. A heater for heating the wafers maintains a temperature difference of 20.degree. C. to 40.degree. C. between the wafers.

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patent: 4299649 (1981-11-01), Gentile et al.
patent: 4382837 (1983-05-01), Rutz
patent: 4648917 (1987-03-01), Kay et al.
patent: 4737232 (1988-04-01), Flicstein et al.

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