LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

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Epitaxial-wafer fabricating process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Epitaxially coated semiconductor wafer and process for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Epitaxially coated semiconductor wafers having low-oxygen zone o

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Epitaxially coated silicon wafer and method for producing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Reexamination Certificate

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Epitaxy layer and method of forming the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Reexamination Certificate

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Epitaxy with compliant layers of group-V species

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Reexamination Certificate

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Equipment and method for manufacturing silicon carbide...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Esrf source for ion plating epitaxial deposition

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Etch process for single crystal silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Etch selectivity enhancement for tunable etch resistant...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Etch stop layer system

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Etch stop layer system

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Excimer laser crystallization of amorphous silicon film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Excimer laser crystallization of amorphous silicon film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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