Excimer laser crystallization of amorphous silicon film

Details Excimer laser crystallization of amorphous silicon film Excimer laser crystallization of amorphous silicon film

2006-06-06

2006-06-06

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S043000, C117S044000, C117S084000

Reexamination Certificate

active

07056382

ABSTRACT:
A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous silicon layer with at least one exposure of the excimer, wherein the first energy density melts the amorphous silicon layer to a first depth from a surface of the amorphous silicon layer equal to the first thickness and the second energy density melts the amorphous silicon layer to a second depth from the surface of the amorphous silicon layer less than the first thickness.

REFERENCES:
patent: 6322625 (2001-11-01), Im
patent: 6392810 (2002-05-01), Tanaka
patent: 6558991 (2003-05-01), Yamazaki et al.
patent: 5-160151 (1993-06-01), None
patent: 1998-0002239 (1999-08-01), None
Moshe Nazarathy &D.W. Dolfi, “Spread-spectrum nonlinear-optical interactons: quasi-phase matching with pseudorandom polarity reversals”, Optics Letters, vol. 12, p. 823, Oct. 1987, pp. 823-825.
Martin M. Fejer, et al., “Quasi-Phase-Matched Second Harmonic Generation: Tuning and Tolerances”, IEEE Journal of Quantum Electronics, vol. 28, No. 11, Nov. 1992, pp. 2631-2654.

Affiliated with

Also associated with

Rating

Excimer laser crystallization of amorphous silicon film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Excimer laser crystallization of amorphous silicon film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Excimer laser crystallization of amorphous silicon film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3708417