LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state,With decomposition of a precursor

Selected: All

All

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9 ! " $ ' ( ) * , - / : < = > ? @ [ \ ] ^ ` { | } ~ €

Method for manufacturing a semiconductor device having a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing a SiC device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing a silicon structure

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing compound semiconductor epitaxial wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing compound semiconductor epitaxial...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing ferroelectric thin film, substrate cove

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing group III nitride compound...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing group III nitride compound...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing group III-V compound semiconductor crys

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing group III-V compound semiconductors

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing high-quality manganese-doped...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing highly-crystallized oxide powder

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing III-V semiconductor layers containing n

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing metal oxide semiconductor...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing semiconductor silicon epitaxial...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing semiconductor substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Method for manufacturing silicon carbide single crystal from...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.

Canada

Charities
Companies
MP Candidates
Patents
Employee Salary Disclosure

World

Places of the World
Scientific Papers

United States

Banks
Companies
Counties
Patents
Employee Salary Disclosure