Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-04-18
2009-08-11
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S089000, C117S097000, C219S460100
Reexamination Certificate
active
07572333
ABSTRACT:
A semiconductor manufacturing apparatus includes a hot plate which heats a sapphire substrate; a support table having a support plate disposed as being spaced away from the hot plate by a predetermined interval, and having support portions which respectively support the sapphire substrate while being spaced by a predetermined interval between the hot plate and the support plate and which support the sapphire substrate in such a manner that back surfaces of the hot plate and the sapphire substrate are opposite to each other; an elevating device which moves the support table up and down; and a shielding cover which externally blocks off spacing defined between the hot plate and the sapphire substrate and spacing defined between the sapphire substrate and the support plate.
REFERENCES:
patent: 6471770 (2002-10-01), Koike et al.
patent: 6679947 (2004-01-01), Koike et al.
patent: 10-070313 (1998-10-01), None
Hiteshew Felisa C
Oki Semiconductor Co., Ltd.
Volentine & Whitt P.L.L.C.
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