Method for manufacturing silicon carbide single crystal from...

Details Method for manufacturing silicon carbide single crystal from... Method for manufacturing silicon carbide single crystal from...

2006-11-14

2006-11-14

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S094000, C117S902000, C117S912000

Reexamination Certificate

active

07135074

ABSTRACT:
A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or smaller than 50% of the growth surface, which has an offset angle equal to or smaller than 60 degrees. The screw dislocation density in the single crystal generated from the generation region is higher than that in the other region. The single crystal includes a flat C-surface facet disposed on a growing surface of the single crystal. The C-surface facet overlaps at least one of parts of the growing surface provided by projecting the generation region in a direction perpendicular to the growth surface and in a direction parallel to a <0001> axis, respectively.

REFERENCES:
patent: 6428621 (2002-08-01), Vodakov et al.
patent: 6534026 (2003-03-01), Vodakov et al.
patent: 6863728 (2005-03-01), Vodakov et al.
patent: A-H05-262599 (1993-10-01), None
patent: A-H08-59389 (1996-03-01), None
patent: A-8-143396 (1996-06-01), None
Official Communication and its translation from Japanese Patent Office dated Oct. 4, 2005.

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