Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-08-22
2006-08-22
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S092000, C117S093000, C117S099000, C117S102000, C117S944000
Reexamination Certificate
active
07094289
ABSTRACT:
A method for manufacturing a highly-crystallized oxide powder, wherein an oxide powder is produced by ejecting a starting material powder containing at least one metal element and/or semimetal element, which will become a constituent component of the oxide, into a reaction vessel together with a carrier gas through a nozzle; and heating the starting material powder at a temperature higher than the decomposition temperature or reaction temperature thereof and not lower than (Tm/2)° C., where Tm° C. stands for a melting point of the oxide, in a state in which the starting material powder is dispersed in a gas phase at a concentration of not higher than 10 g/L. In the above method, the starting material powder may be mixed and dispersed in the carrier gas by using a dispersing machine prior to being ejected into the reaction vessel through a nozzle. The resultant oxide powder has a high crystallinity, a high dispersibility, and a uniform particle size, without introducing impurities thereinto, by a low-cost and simple production equipment.
REFERENCES:
patent: 4049789 (1977-09-01), Manabe et al.
patent: 4929436 (1990-05-01), Legrand et al.
patent: 4980141 (1990-12-01), Kimura et al.
patent: 5152974 (1992-10-01), Legrand et al.
patent: 5582771 (1996-12-01), Yoshimaru et al.
patent: 5851428 (1998-12-01), Matsuda et al.
patent: 6627115 (2003-09-01), Hampden-Smith et al.
patent: 2001/0052589 (2001-12-01), Hampden-Smith et al.
patent: 2002/0197461 (2002-12-01), Takaya et al.
patent: 2004/0009109 (2004-01-01), Akimoto et al.
patent: 1012725 (1991-06-01), None
patent: 1162617 (1997-10-01), None
patent: 100 02 394 (2001-05-01), None
patent: 1 215 174 (2002-06-01), None
patent: 1215174 (2002-06-01), None
patent: XP-002261662 (1990-10-01), None
patent: 5-310425 (1993-11-01), None
patent: 2001-152146 (2001-06-01), None
patent: 2003-104790 (2003-04-01), None
Akimoto Yuji
Nagashima Kazuro
Nakamura Masami
Flynn ,Thiel, Boutell & Tanis, P.C.
Kunemund Robert
Shoei Chemical Inc.
LandOfFree
Method for manufacturing highly-crystallized oxide powder does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing highly-crystallized oxide powder, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing highly-crystallized oxide powder will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3635420