Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-12-18
2000-12-19
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 89, 117 95, 117102, 117945, C30B 2514
Patent
active
061622931
ABSTRACT:
A method for manufacturing a ferroelectric thin film having a layered perovskite crystal structure of the general formula: Bi.sub.2 A.sub.m-1 B.sub.m O.sub.3m+3, wherein A is selected from the group consisting of Na.sup.1+, K.sup.1+, Pb.sup.2+, Ca.sup.2+, Sr.sup.2+, Ba.sup.2+ and Bi.sup.3+, B is selected from the group consisting of Fe.sup.3+, Ti.sup.4+, Nb.sup.5+, Ta.sup.5+, W.sup.6+ and Mo.sup.6+, and m represents an integer of 1 or larger, which comprises introducing into a film formation chamber where a substrate is set, gaseous starting materials inclusive of oxygen gas for forming the ferroelectric thin film in which the flow rate of oxygen gas as one component of the gaseous starting materials is controlled to an arbitrary value necessary for the formation of the ferroelectric thin film having a desired orientation while the pressure inside the film formation chamber and the total flow rate of the gaseous starting materials and an optionally introduced carrier gas are maintained constant.
REFERENCES:
patent: 5683614 (1997-11-01), Boyle
patent: 5801105 (1998-09-01), Yano et al.
patent: 5821005 (1998-10-01), Kijima et al.
"Preparation of C-Axis-Oriented Bi.sub.4 Ti.sub.3 O.sub.12 Thin Films by Metalorganic Chemical Vapor Deposition", by T. Nakamura et al., Jpn. J. Appl. Phys. vol. 32 (1993) Part 1, No. 9B, Sep. 1993 pp. 4086-4088.
"Preparation of Bi.sub.4 Ti.sub.3 O.sub.12 Thin Films with c-axis Orientation by MOCVD Using Bi(o-C.sub.7 H.sub.7).sub.3 and Ti(i-OC.sub.3 H.sub.7).sub.2 (DPM).sub.2 " by K. Yoshimura et al., Journal of the Ceramic Society of Japan 102 (1994) pp. 512-515.
Rusul Muhammet, et al, Effects of Oxygen Concentration on Growth of Bi4T13012 Thin Films by Metalorganic Chemical Vapor Deposition, Jpn. J. Appl. Phys. vol. 33 (1994) pp. 5215-5218, Part 1, No. 9B, Sep. 1994.
"Effects of Oxygen Concentration of Growth of Bi.sub.4 Ti.sub.3 O.sub.12 Thin Films by Metalorganic Chemical Vapor Deposition", by T. Muhammet et al., Jpn. J. Appl. Phys. vol. 33 (1994) Part 1, No. 9B, Sep. 1994 pp. 5215-5218.
"Preparation and Properties of Bi.sub.4 Ti.sub.3 O.sub.12 Thin Films by Electron Cyclotron Resonance Sputtering" by H. Maiwa et al., 10.sup.th International Symposium, (1996) pp. 455-458.
"Ultra-Thin Fatigue-Free Bi.sub.4 Ti.sub.3 O.sub.12 Films for Nonvolatile Ferroelectric Memories", by T. Kijima et al., Jpn. J. Appl. Phys. vol. 35 (1996) Part 1, No. 2B, Feb. 1996 pp. 1246-1250.
Kijima Takeshi
Matsunaga Hironori
Okutoh Akira
Ushikubo Maho
Kunemund Robert
Sharp Kabushiki Kaisha
LandOfFree
Method for manufacturing ferroelectric thin film, substrate cove does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing ferroelectric thin film, substrate cove, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing ferroelectric thin film, substrate cove will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-268019