Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-12-11
2007-12-11
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S902000, C117S904000, C117S952000
Reexamination Certificate
active
10145149
ABSTRACT:
A method for manufacturing a semiconductor substrate of the present invention includes the steps of: (a) providing a support substrate; (b) epitaxially growing a first semiconductor layer on the support substrate; (c) epitaxially growing a second semiconductor layer on the first semiconductor layer; and (d) forming a semiconductor substrate including the first semiconductor layer and the second semiconductor layer by removing the support substrate, wherein an interatomic distance of atoms of the support substrate to which atoms of the first semiconductor layer attach and an interatomic distance of atoms of the second semiconductor layer have the same magnitude relationship with respect to an interatomic distance of the atoms of the first semiconductor layer in an epitaxial growth plane.
REFERENCES:
patent: 5744825 (1998-04-01), Zachai et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6086673 (2000-07-01), Molnar
patent: 6090300 (2000-07-01), Walker et al.
patent: 6210479 (2001-04-01), Bojarczuk et al.
patent: 6342405 (2002-01-01), Major et al.
patent: 6492661 (2002-12-01), Chien et al.
patent: 6501154 (2002-12-01), Morita et al.
patent: 6537513 (2003-03-01), Amano et al.
patent: 6673149 (2004-01-01), Solomon et al.
patent: 2003/0033974 (2003-02-01), Ueda
patent: 2003/0151064 (2003-08-01), Ohno et al.
patent: 2004/0079959 (2004-04-01), Udagawa
patent: 951077 (1999-10-01), None
patent: 05206026 (1993-08-01), None
patent: 10335750 (1998-12-01), None
patent: 2000105321 (2000-04-01), None
patent: 2000-252224 (2000-09-01), None
patent: WO 9925030 (1999-05-01), None
patent: WO 00/33364 (2000-06-01), None
Patent Abstracts of Japan. Engish Abstract of JP 05-206026 (1993).
Patent Abstracts of Japan. English Abstract of JP 2000-105321 (2000).
Olsen et al., “Calculated stresses in multilayered heteroepitaxial structures”, Journal of Applied Physics, vol. 48, No. 6, Jun. 1977, pp. 2543-2547.
Gupta Yogendra N.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Song Matthew J.
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