Method for manufacturing a semiconductor device having a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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C117S004000, C117S097000

Reexamination Certificate

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06893501

ABSTRACT:
A method for manufacturing a capping layer covering a capacitor of a semiconductor memory device, preferably a metal-insulator-metal (MIM) capacitor, wherein the method includes forming a capacitor having a lower electrode, a dielectric layer and an upper electrode on a semiconductor substrate, forming a capping layer on the capacitor, and crystallizing the dielectric layer. Here, forming the capping layer includes stabilizing for deposition of the capping layer without providing oxygen gas, depositing the capping layer by providing a reaction source for the capping layer; and purging an inside of a reactor for forming the capping layer.

REFERENCES:
patent: 2000-42442 (2000-07-01), None

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