Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2004-09-22

2010-11-23

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S097000, C117S103000, C117S923000, C117S929000

Reexamination Certificate

active

07837792

ABSTRACT:
In a method for manufacturing a crystalline silicon film by utilizing a metal element that accelerates the crystallization of silicon, an adverse influence of this metal element can be suppressed. A semiconductor device manufacturing method is comprised of the steps of: forming an amorphous silicon film on a substrate having an insulating surface; patterning the amorphous silicon film to form a predetermined pattern; holding a metal element that accelerates the crystallization of silicon in such a manner that the metal element is brought into contact with the amorphous silicon film; performing a heating process to crystalize the amorphous silicon film, thereby being converted into a crystalline silicon film; and etching a peripheral portion of the pattern of the crystalline silicon film.

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