LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state,With decomposition of a precursor

Selected: I

J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9 ! " $ ' ( ) * , - / : < = > ? @ [ \ ] ^ ` { | } ~ €

III-Nitride optoelectronic semiconductor device containing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

III-V epitaxial wafer production

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

[ 0.00 ] – not rated yet Voters 0 Comments 0

III-V nitride substrate boule and method of making and using...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

In situ growth of oxide and silicon layers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

In-situ post epitaxial treatment process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

In-situ post epitaxial treatment process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

In-situ post epitaxial treatment process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

In-situ post epitaxial treatment process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Induction heated chemical vapor deposition reactor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Inlet system for an MOCVD reactor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

Iridium oxide nanowires and method for forming same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

[ 0.00 ] – not rated yet Voters 0 Comments 0

All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.

Canada

Charities
Companies
MP Candidates
Patents
Employee Salary Disclosure

World

Places of the World
Scientific Papers

United States

Banks
Companies
Counties
Patents
Employee Salary Disclosure