Method for manufacturing III-V semiconductor layers containing n

Details Method for manufacturing III-V semiconductor layers containing n Method for manufacturing III-V semiconductor layers containing n

1997-12-17

1999-11-09

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117108, 117952, C30B 2300

Patent

active

059806311

ABSTRACT:
A method for manufacturing III-V semiconductor layers containing nitrogen whereby during the growth of the layers, the setting of the material sources for Al, In and Ga remains fixed. During the transition to the growth of a layer with another mixed-crystal composition, the nitrogen flow is altered. A greater nitrogen flow leads to an increased installation of the more weakly bound group III elements into the growing material.

REFERENCES:
patent: 5637146 (1997-06-01), Chyi
patent: 5637531 (1997-06-01), Porowski et al.

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