Method for manufacturing a silicon structure

Details Method for manufacturing a silicon structure Method for manufacturing a silicon structure

2006-11-28

2006-11-28

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S084000, C117S089000, C117S092000

Reexamination Certificate

active

07141116

ABSTRACT:
Provided are improved methods for forming silicon films, particularly single-crystal silicon films from amorphous silicon films in which a single-crystal silicon substrate is prepared by removing any native oxide, typically using an aqueous HF solution, and placed in a reaction chamber. The substrate is then heated from about 350° C. to a first deposition temperature under a first ambient to induce single-crystal epitaxial silicon deposition primarily on exposed silicon surfaces. The substrate is then heated to a second deposition temperature under a second ambient that will maintain the single-crystal epitaxial silicon deposition on exposed single-crystal silicon while inducing amorphous epitaxial silicon deposition on insulating surfaces. The amorphous epitaxial silicon can then be converted to single-crystal silicon using a solid phase epitaxy process to form a thin, high quality silicon layer. The first and second ambients include at least one silicon source gas and may include a non-oxidizing carrier gas.

REFERENCES:
patent: 5495823 (1996-03-01), Kobayashi
patent: 1999-38114 (1999-06-01), None
patent: 10-2001-0037531 (2001-05-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing a silicon structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a silicon structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a silicon structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3677550