Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-12-21
1996-12-24
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 94, 117 97, 117106, 117952, G30B 2514
Patent
active
055870147
ABSTRACT:
There is provided a method for manufacturing group III-V compound semiconductors including at least Ga as the group III element and at least N as the group V element by using metal-organic compounds of group III elements having at least Ga in the molecules thereof and compounds having at least N in the molecules thereof as the raw materials, and the group III-V compound semiconductor crystals are grown in a reaction tube, and epitaxial layer of crystals are grown on a substrate made of a material different from that of the crystals to be grown, wherein at least one kind of gas, selected from a group consisting of compounds including halogen elements and group V elements and hydrogen halide, is introduced before the growth of the compound semiconductor crystal begins, thereby to carry out gas-phase etching of the inner wall surface of a reaction tube. Epitaxial crystals having good crystallinity and surface morphology can be obtained with good reproducibility without impairing the productivity and stability of the product property.
REFERENCES:
patent: 4144116 (1979-03-01), Jacob et al.
patent: 4473938 (1984-10-01), Kobayashi et al.
patent: 4855249 (1989-09-01), Akasaki et al.
patent: 4874464 (1989-10-01), Goodwin et al.
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5346581 (1994-09-01), Tsang
H. Amano et al., Appl. Phys. Lett., 48 (5), 3 Feb. 1986, pp. 353-355.
S. Yoshida et al., Appl. Phys. Lett., 42 (5), 1 Mar. 1983, pp. 427-429.
A. Watanabe et al., Journal of Crystal Growth, 128 (1993) pp. 391-396.
S. Nakamura, Japanese Journal of Applied Physics, vol. 30, No. 10A, Oct., 1991, pp. L1705-L1707.
K. Naniwae et al., Journal of Crystal Growth, 99 (1990) pp. 381-384.
Iyechika Yasushi
Takada Tomoyuki
Kunemund Robert
Sumitomo Chemical Company Limited
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