Fabrication of insulated gate bipolar devices
Fast recovery diode and method for its manufacture
Field-effect-controllable semiconductor component and method...
Fin thyristor-based semiconductor device
Finfet devices and methods for manufacturing the same
Formation of InGaSa p-n Junction by control of growth temperatur
Forming of the periphery of a schottky diode with MOS trenches
Gate controlled atomic switch
Gate pad protection structure for power semiconductor device...
Gated lateral thyristor-based random access memory cell...
Gated-thyristor approach having angle-implanted base region
Germanium FinFETs having dielectric punch-through stoppers
Guard ring extension to prevent reliability failures
High density planar SRAM cell using bipolar latch-up and...
High density SRAM cell with latched vertical transistors
High voltage device having polysilicon region in trench and...
High voltage ESD-protection structure
High voltage power MOS device
High voltage power MOSFET having low on-resistance
High voltage transistors and thyristors