Gate controlled atomic switch

Details Gate controlled atomic switch Gate controlled atomic switch

2011-06-14

2011-06-14

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Bidirectional rectifier with control electrode

C257S119000

Reexamination Certificate

active

07960217

ABSTRACT:
The invention relates to a method for producing a switch element. The invention is characterised in that the switch element comprises three electrodes that are located in an electrolyte, two of which (source electrode and drain electrode) are interconnected by a bridge consisting of one or more atoms that can be reversibly opened and closed. The opening and closing of said contact between the source and drain electrodes can be controlled by the potential that is applied to the third electrode (gate electrode). The switch element is produced by the repeated application of potential cycles between the gate electrode and the source or drain electrode. The potential is increased and reduced during the potential cycles until the conductance between the source and drain electrode can be switched back and forth between two conductances, as a result of said change in potential in the gate electrode, as a reproducible function of the voltage of the gate electrode.

REFERENCES:
F. Xie, C. Obermair, T. Schimmel, Solid State Communication, vol. 132 (2004) pp. 437-442.

Affiliated with

Also associated with

Rating

Gate controlled atomic switch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate controlled atomic switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate controlled atomic switch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2625010