Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Reexamination Certificate
2005-08-23
2008-11-25
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
C438S300000, C257SE21389
Reexamination Certificate
active
07456054
ABSTRACT:
One aspect of the present subject matter relates to a memory cell, or more specifically, to a scalable GLTRAM cell that provides DRAM-like density and SRAM-like performance. According to various embodiments, the memory cell includes an access transistor and a gated, lateral thyristor integrally formed above the access transistor. The access transistor has a drain region, a raised source region, and a gate. The thyristor has a first end that is formed with the raised source region of the access transistor. In various embodiments, the lateral thyristor is fabricated using a metal-induced lateral crystallization technique (MILC) adopted for thin-film-transistor (TFT) technology. In various embodiments, the stacked lateral thyristor is integrated by raising the source region of the access transistor using a selective epitaxy process for raised source-drain technology. Other aspects are provided herein.
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Chaudhari Chandra
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
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