Field-effect-controllable semiconductor component and method...

Details Field-effect-controllable semiconductor component and method... Field-effect-controllable semiconductor component and method...

2005-08-09

2005-08-09

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S138000, C438S139000

Reexamination Certificate

active

06927101

ABSTRACT:
A method for fabricating a field-effect-controllable semiconductor component includes providing a configuration having a semiconductor body with a front side, a rear side, a first terminal zone of a first conduction type, a channel zone of a second conduction type formed above the first terminal zone, and at least one control electrode adjacent the channel zone. The control electrode is insulated from the semiconductor body. A second terminal zone of the first conduction type is fabricated in the channel zone near the front side of the semiconductor body by: doping the channel zone near the front side with a first dopant concentration to fabricate a first zone of the first conduction type, and doping a section of the first zone with a second dopant concentration higher than the first dopant concentration to form a second zone of the first conduction type.

REFERENCES:
patent: 6051468 (2000-04-01), Hshieh
patent: 6624469 (2003-09-01), Harada
patent: 2003/0214011 (2003-11-01), Jianjun et al.

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