Semiconductor device manufacturing: process – Making regenerative-type switching device
Patent
1995-05-23
2000-12-19
Bowers, Charles
Semiconductor device manufacturing: process
Making regenerative-type switching device
438459, 438138, 148DIG126, H01L 21332
Patent
active
061626651
ABSTRACT:
A high voltage transistor or thyristor having a base layer which is a thinned neutron transmuted wafer 102, 152 instead of a diffused or epitaxially grown base layer. The neutron transmuted wafer has high resistivity and a desired thickness while the layer formed overlying the surface of the neutron transmuted wafer has a desired thickness and doping level. Adjusting the thicknesses and doping levels within these two structures produce a device having the desire high voltage characteristics. The various embodiments provides for a high voltage MOSFET 100, IGBT 170, and thyristor.
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S. Wolf & R.N. Tauber, "Silicon Processing for the VLSI Era" vol. I, p. 28, 1986 Lattice Press.
Bowers Charles
Hawranek Scott J.
Ixys Corporation
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