High voltage transistors and thyristors

Details High voltage transistors and thyristors High voltage transistors and thyristors

1995-05-23

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Making regenerative-type switching device

438459, 438138, 148DIG126, H01L 21332

Patent

active

061626651

ABSTRACT:
A high voltage transistor or thyristor having a base layer which is a thinned neutron transmuted wafer 102, 152 instead of a diffused or epitaxially grown base layer. The neutron transmuted wafer has high resistivity and a desired thickness while the layer formed overlying the surface of the neutron transmuted wafer has a desired thickness and doping level. Adjusting the thicknesses and doping levels within these two structures produce a device having the desire high voltage characteristics. The various embodiments provides for a high voltage MOSFET 100, IGBT 170, and thyristor.

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S. Wolf & R.N. Tauber, "Silicon Processing for the VLSI Era" vol. I, p. 28, 1986 Lattice Press.

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